收藏本站
New Product
Si7738DP
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
150
R DS(on) ( Ω )
0.038 at V GS = 10 V
I D (A) a
30
Q g (Typ.)
35 nC
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? 100 % UIS Tested
PowerPAK SO- 8
?
APPLICATIONS
? Primary Side Switch
6.15 mm
1
S
S
5.15 mm
D
2
3
S
G
4
D
8
7
D
D
G
6
D
5
Bottom V ie w
Orderin g Information: Si773 8 DP-T1-E3 (Lead (P b )-free)
Si773 8 DP-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
150
± 20
30 a
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
26
7.7 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
6.2 b, c
60
30 a
4.5 b, c
30
45
A
mJ
T C = 25 °C
96
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
62
5.4 b, c
W
T A = 70 °C
3.5 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typical Maximum Unit
Maximum Junction-to-Ambient b, f t ≤ 10 s
Maximum Junction-to-Case (Drain) Steady State
R thJA
R thJC
18 23
1 1.3
°C/W
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 69982
S09-0536-Rev. C, 06-Apr-09
www.vishay.com
1
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI7758DP-T1-GE3 MOSFET N-CH 30V 60A PPAK 8SOIC
SI7802DN-T1-GE3 MOSFET N-CH 250V 1.24A 1212-8
SI7810DN-T1-GE3 MOSFET N-CH D-S 100V 1212-8 PPAK
SI7812DN-T1-GE3 MOSFET N-CH 75V 16A 1212-8 PPAK
SI7842DP-T1-GE3 MOSFET DL N-CH 30V PPAK 8-SOIC
SI7846DP-T1-GE3 MOSFET N-CH D-S 150V PPAK 8SOIC
SI7848BDP-T1-E3 MOSFET N-CH D-S 40V PPAK 8SOIC
SI7868ADP-T1-GE3 MOSFET N-CH D-S 20V PPAK 8SOIC
相关代理商/技术参数
SI7738DP-T1-GE3 功能描述:MOSFET 150V 30A 96W 38mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7742DP-T1-GE3 功能描述:MOSFET 30V 60A 83W 3.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7748DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI7748DP-T1-GE3 功能描述:MOSFET 30V 50A 56W 4.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7758DP-T1-GE3 功能描述:MOSFET 30V 60A 104W 2.9mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7772DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI7772DP-T1-GE3 功能描述:MOSFET 30V 35.6A 29.8W 13mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7772DP-T1-GE3 制造商:Vishay Siliconix 功能描述:N CHANNEL MOSFET 30V 35.6A